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TSML1020 High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Rectifier Diode

ChongMing Group (HK) Int'l Co., Ltd
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TSML1020 High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Rectifier Diode

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Brand Name : VISHAY

Model Number : TSML1020

Certification : Original Factory Pack

Place of Origin : Original

MOQ : 20pcs

Price : Negotiation

Payment Terms : T/T, Western Union,PayPal

Supply Ability : 5200PCS

Delivery Time : 1 Day

Packaging Details : please contact me for details

Description : Infrared (IR) Emitter 940nm 1.2V 100mA 3mW/sr @ 20mA 24° 2-SMD, Gull Wing

VR : 5 V

IF : 100 mA

IFM : 200 mA

IFSM : 1.0 A

PV : 190 mW

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High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs


Features
• Outstanding high radiant power
• Low forward voltage
• Suitable for high pulse current operation
• Angle of half intensity ϕ = ± 12°
• Peak waveleCM GROUPh λp = 950 nm
• High reliability
• Matched Phototransistor series: TEMT1000
• Versatile terminal configurations
• Lead-free component

Description
TSML1000 series are high efficiency infrared emitting diodes in GaAlAs on GaAs technology molded in clear SMD package.

This technology represents best performance for radiant power under pulse conditions, forward voltage and reliability

Typical Characteristics (Tamb = 25 °C unless otherwise specified)


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Product Tags:

diode rectifier circuit

      

bridge rectifier circuit

      
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